Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
-CoolMOS™ CECoolMOS™ P7
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveLast Time Buy
Drain to Source Voltage (Vdss)
500 V700 V
Current - Continuous Drain (Id) @ 25°C
3.6A (Tc)5.3A (Tc)6A (Tc)6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V13V
Rds On (Max) @ Id, Vgs
750mOhm @ 1.4A, 10V900mOhm @ 1.1A, 10V1.5Ohm @ 2.5A, 10V2Ohm @ 600mA, 13V
Vgs(th) (Max) @ Id
3.5V @ 50µA3.5V @ 60µA3.5V @ 70µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V6.8 nC @ 10 V8.3 nC @ 10 V20 nC @ 10 V
Vgs (Max)
±16V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
124 pF @ 100 V211 pF @ 400 V306 pF @ 400 V325 pF @ 100 V
Power Dissipation (Max)
5W (Tc)6.7W (Tc)30.5W (Tc)104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
DPAKPG-SOT223PG-SOT223-3PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PG-SOT223-3
IPN50R2K0CEATMA1
MOSFET N-CH 500V 3.6A SOT223
Infineon Technologies
10,641
In Stock
1 : ¥4.02000
Cut Tape (CT)
3,000 : ¥1.36493
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
500 V
3.6A (Tc)
13V
2Ohm @ 600mA, 13V
3.5V @ 50µA
6 nC @ 10 V
±20V
124 pF @ 100 V
-
5W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-3
TO-261-4, TO-261AA
PG-SOT223
IPN70R750P7SATMA1
MOSFET N-CH 700V 6.5A SOT223
Infineon Technologies
13,790
In Stock
1 : ¥4.10000
Cut Tape (CT)
3,000 : ¥1.91494
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
700 V
6.5A (Tc)
10V
750mOhm @ 1.4A, 10V
3.5V @ 70µA
8.3 nC @ 10 V
±16V
306 pF @ 400 V
-
6.7W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-SOT223
TO-261-4, TO-261AA
TO252-3
IPD70R900P7SAUMA1
MOSFET N-CH 700V 6A TO252-3
Infineon Technologies
7,276
In Stock
1 : ¥5.66000
Cut Tape (CT)
2,500 : ¥2.13750
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
700 V
6A (Tc)
10V
900mOhm @ 1.1A, 10V
3.5V @ 60µA
6.8 nC @ 10 V
±16V
211 pF @ 400 V
-
30.5W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
SIHD5N50D-GE3
MOSFET N-CH 500V 5.3A TO252AA
Vishay Siliconix
0
In Stock
3,000 : ¥3.42948
Tube
-
Tube
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
500 V
5.3A (Tc)
10V
1.5Ohm @ 2.5A, 10V
5V @ 250µA
20 nC @ 10 V
±30V
325 pF @ 100 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.