Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedInfineon TechnologiesTexas Instruments
Series
-CoolMOS™ CPNexFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V20 V600 V
Current - Continuous Drain (Id) @ 25°C
1.6A (Ta)14A (Ta), 54A (Tc)21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V1.8V, 4.5V10V
Rds On (Max) @ Id, Vgs
8mOhm @ 12A, 4.5V34mOhm @ 1A, 4.5V165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA1.1V @ 250µA3.5V @ 790µA
Gate Charge (Qg) (Max) @ Vgs
2.9 nC @ 4.5 V52 nC @ 10 V72 nC @ 4.5 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
462 pF @ 6 V2000 pF @ 100 V6909 pF @ 10 V
Power Dissipation (Max)
1.2W (Ta)2.4W (Ta), 41W (Tc)192W (Tc)
Supplier Device Package
4-DSBGA (1x1)PG-TO263-3-2POWERDI3333-8
Package / Case
4-UFBGA, DSBGA8-PowerVDFNTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB60R165CPATMA1
MOSFET N-CH 600V 21A TO263-3
Infineon Technologies
6,043
In Stock
1 : ¥40.47000
Cut Tape (CT)
1,000 : ¥20.93065
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
21A (Tc)
10V
165mOhm @ 12A, 10V
3.5V @ 790µA
52 nC @ 10 V
±20V
2000 pF @ 100 V
-
192W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
4-DSBGA-YZB
CSD13201W10
MOSFET N-CH 12V 1.6A 4DSBGA
Texas Instruments
36,263
In Stock
1 : ¥3.94000
Cut Tape (CT)
3,000 : ¥1.06177
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
12 V
1.6A (Ta)
1.8V, 4.5V
34mOhm @ 1A, 4.5V
1.1V @ 250µA
2.9 nC @ 4.5 V
±8V
462 pF @ 6 V
-
1.2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
4-DSBGA (1x1)
4-UFBGA, DSBGA
PowerDI3333-8
DMP2008UFG-7
MOSFET P-CH 20V 14A PWRDI3333
Diodes Incorporated
52,572
In Stock
1 : ¥4.60000
Cut Tape (CT)
2,000 : ¥1.55818
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
14A (Ta), 54A (Tc)
1.5V, 4.5V
8mOhm @ 12A, 4.5V
1V @ 250µA
72 nC @ 4.5 V
±8V
6909 pF @ 10 V
-
2.4W (Ta), 41W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.