Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

DMP3068L-7 MOSFET P-CH 30V 3.3A SOT23 Diodes Incorporated	159,121 In Stock	1 : ¥3.37000 Cut Tape (CT) 3,000 : ¥0.60559 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	3.3A (Ta)	1.8V, 10V	72mOhm @ 4.2A, 10V	1.3V @ 250µA	15.9 nC @ 10 V	±12V	708 pF @ 15 V	-	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMN2300UFB4-7B MOSFET N-CH 20V 1.3A 3DFN Diodes Incorporated	389,674 In Stock	1 : ¥2.46000 Cut Tape (CT) 10,000 : ¥0.40432 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1.3A (Ta)	1.5V, 4.5V	175mOhm @ 300mA, 4.5V	950mV @ 250µA	1.6 nC @ 4.5 V	±8V	64.3 pF @ 25 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	X2-DFN1006-3	3-XFDFN
ISC019N03L5SATMA1 MOSFET N-CH 30V 28A/100A TDSON Infineon Technologies	21,949 In Stock	1 : ¥5.25000 Cut Tape (CT) 5,000 : ¥2.80765 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	28A (Ta), 100A (Tc)	4.5V, 10V	1.9mOhm @ 30A, 10V	2V @ 250µA	44 nC @ 10 V	±20V	2800 pF @ 15 V	-	2.5W (Ta), 69W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-5	8-PowerTDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.