Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedNexperia USA Inc.Rohm Semiconductor
Series
-TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V60 V
Current - Continuous Drain (Id) @ 25°C
320mA (Ta)2.5A (Ta)4.2A (Ta)4.5A (Ta)4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
23.7mOhm @ 4.5A, 4.5V25mOhm @ 5.8A, 10V45mOhm @ 6A, 10V90mOhm @ 1.5A, 4.5V1.6Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA1.5V @ 1mA1.5V @ 250µA2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.8 nC @ 4.5 V3.5 nC @ 4.5 V8.1 nC @ 4.5 V10.5 nC @ 10 V13.2 nC @ 10 V
Vgs (Max)
±12V±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V335 pF @ 15 V620 pF @ 15 V641 pF @ 15 V900 pF @ 15 V
Power Dissipation (Max)
260mW (Ta), 830mW (Tc)500mW (Ta)780mW (Ta)1W (Tc)1.7W (Ta)
Operating Temperature
-55°C ~ 150°C (TA)-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
8-SOSOT-23-3SOT-323TUMT6
Package / Case
6-SMD, Flat Leads8-SOIC (0.154", 3.90mm Width)SC-70, SOT-323TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-323
BSS138PW,115
MOSFET N-CH 60V 320MA SOT323
Nexperia USA Inc.
913,166
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37872
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
320mA (Ta)
10V
1.6Ohm @ 300mA, 10V
1.5V @ 250µA
0.8 nC @ 4.5 V
±20V
50 pF @ 10 V
-
260mW (Ta), 830mW (Tc)
-55°C ~ 150°C (TA)
Automotive
AEC-Q101
Surface Mount
SOT-323
SC-70, SOT-323
SOT-323
DMP2165UW-7
MOSFET P-CH 20V 2.5A SOT323 T&R
Diodes Incorporated
21,568
In Stock
2,166,000
Factory
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.68119
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
2.5A (Ta)
1.8V, 4.5V
90mOhm @ 1.5A, 4.5V
1V @ 250µA
3.5 nC @ 4.5 V
±12V
335 pF @ 15 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-323
SC-70, SOT-323
SOT-23-3
DMG3404L-7
MOSFET N-CH 30V 4.2A SOT23
Diodes Incorporated
37,138
In Stock
2,097,000
Factory
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥0.77194
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
4.2A (Ta)
4.5V, 10V
25mOhm @ 5.8A, 10V
2V @ 250µA
13.2 nC @ 10 V
±20V
641 pF @ 15 V
-
780mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8 SO
DMP3050LSS-13
MOSFET P-CH 30V 4.8A 8SO
Diodes Incorporated
2,172
In Stock
15,000
Factory
1 : ¥4.19000
Cut Tape (CT)
2,500 : ¥1.40273
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
4.8A (Ta)
4.5V, 10V
45mOhm @ 6A, 10V
2V @ 250µA
10.5 nC @ 10 V
±25V
620 pF @ 15 V
-
1.7W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
TUMT6_TUMT6 Pkg
RF6E045AJTCR
MOSFET N-CHANNEL 30V 4.5A TUMT6
Rohm Semiconductor
4,848
In Stock
1 : ¥4.93000
Cut Tape (CT)
3,000 : ¥1.66336
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
4.5A (Ta)
4.5V
23.7mOhm @ 4.5A, 4.5V
1.5V @ 1mA
8.1 nC @ 4.5 V
±12V
900 pF @ 15 V
-
1W (Tc)
150°C (TJ)
-
-
Surface Mount
TUMT6
6-SMD, Flat Leads
Showing
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.