Single FETs, MOSFETs

Results: 4
Manufacturer
Littelfuse Inc.Rohm Semiconductor
Series
-Polar
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1000 V1200 V1500 V1700 V
Current - Continuous Drain (Id) @ 25°C
100mA (Tc)1.4A (Tc)2.5A (Tc)4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V18V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1.1A, 18V6Ohm @ 2A, 10V13Ohm @ 700mA, 10V80Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
4V @ 410µA4.5V @ 100µA4.5V @ 25µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.9 nC @ 10 V14 nC @ 18 V24.8 nC @ 10 V44.5 nC @ 10 V
Vgs (Max)
±20V+22V, -6V±30V
Input Capacitance (Ciss) (Max) @ Vds
54 pF @ 25 V184 pF @ 800 V666 pF @ 25 V1576 pF @ 25 V
Power Dissipation (Max)
25W (Tc)44W (Tc)86W (Tc)110W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
ISO247TO-252AATO-268
Package / Case
TO-247-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-252-3
IXTY01N100
MOSFET N-CH 1000V 100MA TO252AA
Littelfuse Inc.
20,540
In Stock
1 : ¥15.84000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
100mA (Tc)
10V
80Ohm @ 100mA, 10V
4.5V @ 25µA
6.9 nC @ 10 V
±20V
54 pF @ 25 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SCT2xxxNYTB
SCT2H12NYTB
SICFET N-CH 1700V 4A TO268
Rohm Semiconductor
2,317
In Stock
1 : ¥52.46000
Cut Tape (CT)
400 : ¥33.66185
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
1700 V
4A (Tc)
18V
1.5Ohm @ 1.1A, 18V
4V @ 410µA
14 nC @ 18 V
+22V, -6V
184 pF @ 800 V
-
44W (Tc)
175°C (TJ)
Surface Mount
TO-268
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO 247 ISO EP (J)
IXTJ4N150
MOSFET N-CH 1500V 2.5A TO247
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥94.08000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1500 V
2.5A (Tc)
10V
6Ohm @ 2A, 10V
5V @ 250µA
44.5 nC @ 10 V
±30V
1576 pF @ 25 V
-
110W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
ISO247
TO-247-3
MOSFET N-CH 1200V 1.4A TO252
IXTY1R4N120P-TRL
MOSFET N-CH 1200V 1.4A TO252
Littelfuse Inc.
0
In Stock
Check Lead Time
2,500 : ¥15.92610
Tape & Reel (TR)
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
1200 V
1.4A (Tc)
10V
13Ohm @ 700mA, 10V
4.5V @ 100µA
24.8 nC @ 10 V
±30V
666 pF @ 25 V
-
86W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.