Single FETs, MOSFETs

Results: 6
Series
MDmesh™MDmesh™ II PlusMDmesh™ M2MDmesh™ V
Drain to Source Voltage (Vdss)
600 V650 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)20A (Tc)24A (Tc)35A (Tc)
Rds On (Max) @ Id, Vgs
78mOhm @ 19.5A, 10V150mOhm @ 12A, 10V190mOhm @ 9A, 10V290mOhm @ 10A, 10V-
Vgs(th) (Max) @ Id
4V @ 250µA5V @ 250µA-
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V37 nC @ 10 V54 nC @ 10 V91 nC @ 10 V
Vgs (Max)
±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
1060 pF @ 100 V1370 pF @ 100 V1500 pF @ 25 V3375 pF @ 100 V
Power Dissipation (Max)
45W (Tc)150W (Tc)169W (Tc)170W (Tc)192W (Tc)210W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)-
Supplier Device Package
TO-220TO-220FP
Package / Case
TO-220-3TO-220-3 Full Pack
Stocking Options
Environmental Options
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Marketplace Product
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Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220FP
STP20NM60FP
MOSFET N-CH 600V 20A TO220FP
STMicroelectronics
443
In Stock
1 : ¥55.17000
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N-Channel
MOSFET (Metal Oxide)
600 V
20A (Tc)
10V
290mOhm @ 10A, 10V
5V @ 250µA
54 nC @ 10 V
±30V
1500 pF @ 25 V
-
45W (Tc)
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
TO-220-3
STP45N65M5
MOSFET N-CH 650V 35A TO220
STMicroelectronics
738
In Stock
1 : ¥62.64000
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N-Channel
MOSFET (Metal Oxide)
650 V
35A (Tc)
10V
78mOhm @ 19.5A, 10V
5V @ 250µA
91 nC @ 10 V
±25V
3375 pF @ 100 V
-
210W (Tc)
150°C (TJ)
Through Hole
TO-220
TO-220-3
TO-220-3
STP24N60M2
MOSFET N-CH 600V 18A TO220
STMicroelectronics
890
In Stock
1 : ¥23.32000
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N-Channel
MOSFET (Metal Oxide)
600 V
18A (Tc)
10V
190mOhm @ 9A, 10V
4V @ 250µA
29 nC @ 10 V
±25V
1060 pF @ 100 V
-
150W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
TO-220-3
STP28N60M2
MOSFET N-CH 600V 24A TO220
STMicroelectronics
887
In Stock
1 : ¥15.60000
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N-Channel
MOSFET (Metal Oxide)
600 V
24A (Tc)
10V
150mOhm @ 12A, 10V
4V @ 250µA
37 nC @ 10 V
±25V
1370 pF @ 100 V
-
170W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
TO-220-3
STP20NM60
MOSFET N-CH 600V 20A TO220AB
STMicroelectronics
812
In Stock
1 : ¥35.47000
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N-Channel
MOSFET (Metal Oxide)
600 V
20A (Tc)
10V
290mOhm @ 10A, 10V
5V @ 250µA
54 nC @ 10 V
±30V
1500 pF @ 25 V
-
192W (Tc)
150°C (TJ)
Through Hole
TO-220
TO-220-3
TO-220-3
STP26N60M2
MOSFET N-CHANNEL 600V 20A TO220
STMicroelectronics
0
In Stock
Check Lead Time
1,000 : ¥11.79388
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N-Channel
MOSFET (Metal Oxide)
600 V
20A (Tc)
10V
-
-
-
±25V
-
-
169W (Tc)
-
Through Hole
TO-220
TO-220-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.