Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
ELOptiMOS™ 5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
100 V600 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
15mOhm @ 20A, 10V180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
2.1V @ 33µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V86 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
1920 pF @ 100 V2500 pF @ 50 V
Power Dissipation (Max)
2.1W (Ta), 63W (Tc)35W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TSDSON-8TO-220 Full Pack
Package / Case
8-PowerTDFNTO-220-3 Full Pack
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSZ150N10LS3GATMA1
MOSFET N-CH 100V 40A 8TSDSON
Infineon Technologies
7,160
In Stock
1 : ¥12.48000
Cut Tape (CT)
5,000 : ¥5.42356
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
40A (Tc)
4.5V, 10V
15mOhm @ 20A, 10V
2.1V @ 33µA
35 nC @ 10 V
±20V
2500 pF @ 50 V
-
2.1W (Ta), 63W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
890
In Stock
1 : ¥21.59000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
8A (Tc)
10V
180mOhm @ 11A, 10V
4V @ 250µA
86 nC @ 10 V
±30V
1920 pF @ 100 V
-
35W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220 Full Pack
TO-220-3 Full Pack
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.