Single FETs, MOSFETs

Results: 7
Manufacturer
Diodes IncorporatedInfineon TechnologiesonsemiSTMicroelectronics
Series
-OptiMOS™PowerTrench®SIPMOS®STripFET™ II
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
1A (Tc)3.3A (Ta), 16A (Tc)7.5A (Tc)12.4A (Ta)30A (Tc)70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
4.3mOhm @ 70A, 10V12mOhm @ 11A, 10V13.5mOhm @ 30A, 10V13.6mOhm @ 30A, 10V19.5mOhm @ 3.5A, 10V110mOhm @ 3.3A, 10V800mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA1V @ 380µA2.2V @ 10µA2.2V @ 250µA2.2V @ 30µA2.3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V14 nC @ 10 V16.5 nC @ 10 V21 nC @ 10 V25.1 nC @ 10 V34 nC @ 4.5 V48 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
372 pF @ 25 V880 pF @ 50 V980 pF @ 25 V1000 pF @ 15 V1415 pF @ 15 V1700 pF @ 25 V3300 pF @ 25 V
Power Dissipation (Max)
1.6W (Ta)1.8W (Ta)2.3W (Ta), 35W (Tc)2.5W (Tc)31W (Tc)68W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
8-MLP (3.3x3.3)8-SOICPG-SOT223-4PG-TO252-3PG-TO252-3-11TO-252-3
Package / Case
8-PowerWDFN8-SOIC (0.154", 3.90mm Width)TO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-252-2
DMN3016LK3-13
MOSFET N-CH 30V 12.4A TO252
Diodes Incorporated
8,804
In Stock
17,500
Factory
1 : ¥4.43000
Cut Tape (CT)
2,500 : ¥1.49527
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
12.4A (Ta)
4.5V, 10V
12mOhm @ 11A, 10V
2.3V @ 250µA
25.1 nC @ 10 V
±20V
1415 pF @ 15 V
-
1.6W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IPD135N03LGATMA1
MOSFET N-CH 30V 30A TO252-3
Infineon Technologies
31,534
In Stock
1 : ¥6.24000
Cut Tape (CT)
2,500 : ¥2.38209
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
30A (Tc)
4.5V, 10V
13.5mOhm @ 30A, 10V
2.2V @ 250µA
10 nC @ 10 V
±20V
1000 pF @ 15 V
-
31W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
8 POWER WDFN
FDMC3612
MOSFET N-CH 100V 3.3A/16A 8MLP
onsemi
7,544
In Stock
660,000
Factory
1 : ¥10.92000
Cut Tape (CT)
3,000 : ¥4.51605
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
3.3A (Ta), 16A (Tc)
6V, 10V
110mOhm @ 3.3A, 10V
4V @ 250µA
21 nC @ 10 V
±20V
880 pF @ 50 V
-
2.3W (Ta), 35W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-MLP (3.3x3.3)
8-PowerWDFN
TO252-3
IPD70N03S4L04ATMA1
MOSFET N-CH 30V 70A TO252-3
Infineon Technologies
5,013
In Stock
1 : ¥11.41000
Cut Tape (CT)
2,500 : ¥4.72918
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
70A (Tc)
4.5V, 10V
4.3mOhm @ 70A, 10V
2.2V @ 30µA
48 nC @ 10 V
±16V
3300 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-11
TO-252-3, DPAK (2 Leads + Tab), SC-63
8-SOIC
STS7NF60L
MOSFET N-CH 60V 7.5A 8SO
STMicroelectronics
5,889
In Stock
1 : ¥16.01000
Cut Tape (CT)
2,500 : ¥7.22348
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
7.5A (Tc)
5V, 10V
19.5mOhm @ 3.5A, 10V
1V @ 250µA
34 nC @ 4.5 V
±16V
1700 pF @ 25 V
-
2.5W (Tc)
150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
TO252-3
IPD30N03S4L14ATMA1
MOSFET N-CH 30V 30A TO252-3
Infineon Technologies
18,935
In Stock
1 : ¥7.55000
Cut Tape (CT)
2,500 : ¥2.86420
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
30A (Tc)
4.5V, 10V
13.6mOhm @ 30A, 10V
2.2V @ 10µA
14 nC @ 10 V
±16V
980 pF @ 25 V
-
31W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-11
TO-252-3, DPAK (2 Leads + Tab), SC-63
SOT-223-4
BSP322PH6327XTSA1
MOSFET P-CH 100V 1A SOT223-4
Infineon Technologies
1,897
In Stock
1 : ¥6.98000
Cut Tape (CT)
1,000 : ¥2.96653
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
1A (Tc)
4.5V, 10V
800mOhm @ 1A, 10V
1V @ 380µA
16.5 nC @ 10 V
±20V
372 pF @ 25 V
-
1.8W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
Showing
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.