Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon Technologiesonsemi
Series
OptiMOS™PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
100 V150 V
Current - Continuous Drain (Id) @ 25°C
9A (Ta), 43A (Tc)21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V8V, 10V
Rds On (Max) @ Id, Vgs
14mOhm @ 9A, 10V52mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
890 pF @ 75 V1290 pF @ 50 V
Power Dissipation (Max)
2.3W (Ta), 54W (Tc)57W (Tc)
Supplier Device Package
PG-TSDSON-8Power33
Package / Case
8-PowerTDFN8-PowerWDFN
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSZ520N15NS3GATMA1
MOSFET N-CH 150V 21A 8TSDSON
Infineon Technologies
14,325
In Stock
1 : ¥13.30000
Cut Tape (CT)
5,000 : ¥5.24511
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
21A (Tc)
8V, 10V
52mOhm @ 18A, 10V
4V @ 35µA
12 nC @ 10 V
±20V
890 pF @ 75 V
-
57W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
Power33
FDMC86160
MOSFET N CH 100V 9A POWER33
onsemi
3,428
In Stock
1 : ¥19.62000
Cut Tape (CT)
3,000 : ¥8.85757
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
9A (Ta), 43A (Tc)
6V, 10V
14mOhm @ 9A, 10V
4V @ 250µA
22 nC @ 10 V
±20V
1290 pF @ 50 V
-
2.3W (Ta), 54W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
Power33
8-PowerWDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.