Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

SSM3K17FU,LF MOSFET N-CH 50V 100MA USM Toshiba Semiconductor and Storage	31,459 In Stock	1 : ¥2.55000 Cut Tape (CT) 3,000 : ¥0.42675 Tape & Reel (TR)	π-MOSV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	100mA (Ta)	2.5V, 4V	20Ohm @ 10mA, 4V	1.5V @ 1µA	-	±7V	7 pF @ 3 V	-	150mW (Ta)	150°C (TJ)	-	-	Surface Mount	USM	SC-70, SOT-323
SSM3J117TU,LF MOSFET P-CHANNEL 30V 2A UFM Toshiba Semiconductor and Storage	16,773 In Stock	1 : ¥2.87000 Cut Tape (CT) 3,000 : ¥0.76808 Tape & Reel (TR)	U-MOSII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	2A (Ta)	4V, 10V	117mOhm @ 1A, 10V	2.6V @ 1mA	-	±20V	280 pF @ 15 V	-	500mW (Ta)	150°C	-	-	Surface Mount	UFM	3-SMD, Flat Leads
FDWS86068-F085 MOSFET N-CH 100V 80A 8DFN onsemi	2,103 In Stock	1 : ¥27.91000 Cut Tape (CT) 3,000 : ¥13.60173 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	80A (Tc)	10V	6.4mOhm @ 80A, 10V	4V @ 250µA	43 nC @ 10 V	±20V	2220 pF @ 50 V	-	214W (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-DFN (5.1x6.3)	8-PowerTDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.