Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon Technologiesonsemi
Series
-HEXFET®QFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V100 V200 V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta)3.7A (Tc)180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V10V
Rds On (Max) @ Id, Vgs
4.3mOhm @ 110A, 10V1.4Ohm @ 1.85A, 10V7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V130 nC @ 4.5 V
Vgs (Max)
±16V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V430 pF @ 25 V11360 pF @ 50 V
Power Dissipation (Max)
200mW (Ta)2.5W (Ta), 45W (Tc)370W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
SOT-23-3TO-220ABTO-252AA
Package / Case
TO-220-3TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
2N7002
MOSFET SOT23 N 60V 5OHM 150C
onsemi
82,981
In Stock
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥0.98624
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-252AA
FQD5P20TM
MOSFET P-CH 200V 3.7A DPAK
onsemi
4,865
In Stock
1 : ¥7.64000
Cut Tape (CT)
2,500 : ¥2.88900
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
200 V
3.7A (Tc)
10V
1.4Ohm @ 1.85A, 10V
5V @ 250µA
13 nC @ 10 V
±30V
430 pF @ 25 V
-
2.5W (Ta), 45W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220AB PKG
IRLB4030PBF
MOSFET N-CH 100V 180A TO220AB
Infineon Technologies
9,095
In Stock
1 : ¥30.46000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
4.5V, 10V
4.3mOhm @ 110A, 10V
2.5V @ 250µA
130 nC @ 4.5 V
±16V
11360 pF @ 50 V
-
370W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.