Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedonsemiVishay Siliconix
Series
-PowerTrench®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V40 V100 V
Current - Continuous Drain (Id) @ 25°C
1.3A (Ta)2.4A (Ta)4.3A (Tc)5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 10V2.5V, 4.5V6V, 10V
Rds On (Max) @ Id, Vgs
32mOhm @ 4A, 4.5V51mOhm @ 3.2A, 10V55mOhm @ 2.4A, 4.5V350mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA1.5V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.1 nC @ 5 V13 nC @ 10 V14 nC @ 4.5 V36 nC @ 8 V
Vgs (Max)
±8V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
370 pF @ 20 V424 pF @ 50 V882 pF @ 10 V
Power Dissipation (Max)
500mW (Ta)960mW (Ta), 1.7W (Tc)1W (Ta), 1.7W (Tc)1.1W (Ta)
Supplier Device Package
SOT-23-3SOT-23-3 (TO-236)SOT-26
Package / Case
SOT-23-6TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
Vishay Siliconix
23,534
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.70205
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
5.9A (Tc)
1.8V, 4.5V
32mOhm @ 4A, 4.5V
1V @ 250µA
36 nC @ 8 V
±8V
-
-
1W (Ta), 1.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
FDN302P
MOSFET P-CH 20V 2.4A SUPERSOT3
onsemi
20,185
In Stock
1 : ¥4.10000
Cut Tape (CT)
3,000 : ¥1.11730
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
2.4A (Ta)
2.5V, 4.5V
55mOhm @ 2.4A, 4.5V
1.5V @ 250µA
14 nC @ 4.5 V
±12V
882 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT 26
ZXMP10A17E6TA
MOSFET P-CH 100V 1.3A SOT26
Diodes Incorporated
23,504
In Stock
249,000
Factory
1 : ¥6.08000
Cut Tape (CT)
3,000 : ¥2.30676
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
1.3A (Ta)
6V, 10V
350mOhm @ 1.4A, 10V
4V @ 250µA
6.1 nC @ 5 V
±20V
424 pF @ 50 V
-
1.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-26
SOT-23-6
SOT-23-3
SI2356DS-T1-GE3
MOSFET N-CH 40V 4.3A TO236
Vishay Siliconix
21,087
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.85907
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
4.3A (Tc)
2.5V, 10V
51mOhm @ 3.2A, 10V
1.5V @ 250µA
13 nC @ 10 V
±12V
370 pF @ 20 V
-
960mW (Ta), 1.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.