Single FETs, MOSFETs

Results: 4
Manufacturer
Alpha & Omega Semiconductor Inc.Diodes IncorporatedRohm SemiconductorToshiba Semiconductor and Storage
Series
-U-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V40 V50 V60 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)2A (Ta)26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V1.8V, 8V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
40mOhm @ 20A, 10V185mOhm @ 1A, 8V1.2Ohm @ 200mA, 4.5V3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id
1V @ 100µA1.2V @ 1mA1.5V @ 250µA2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.1 nC @ 4.2 V1.4 nC @ 4.5 V54 nC @ 10 V
Vgs (Max)
±10V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V115 pF @ 10 V130 pF @ 10 V3600 pF @ 30 V
Power Dissipation (Max)
150mW (Ta)200mW (Ta)1W (Ta)2.5W (Ta), 60W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23FSOT-323TO-252 (DPAK)UMT3F
Package / Case
SC-70, SOT-323SC-85SOT-23-3 Flat LeadsTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-323
BSS138W-7-F
MOSFET N-CH 50V 200MA SOT323
Diodes Incorporated
742,098
In Stock
1 : ¥2.38000
Cut Tape (CT)
3,000 : ¥0.40362
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
10V
3.5Ohm @ 220mA, 10V
1.5V @ 250µA
-
±20V
50 pF @ 10 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
29,185
In Stock
1 : ¥7.22000
Cut Tape (CT)
2,500 : ¥2.99940
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
26A (Tc)
4.5V, 10V
40mOhm @ 20A, 10V
2.4V @ 250µA
54 nC @ 10 V
±20V
3600 pF @ 30 V
-
2.5W (Ta), 60W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
UMT3F
RU1C002ZPTCL
MOSFET P-CH 20V 200MA UMT3F
Rohm Semiconductor
157,231
In Stock
1 : ¥2.30000
Cut Tape (CT)
3,000 : ¥0.38482
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
200mA (Ta)
1.2V, 4.5V
1.2Ohm @ 200mA, 4.5V
1V @ 100µA
1.4 nC @ 4.5 V
±10V
115 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
UMT3F
SC-85
75,180
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥0.62274
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
2A (Ta)
1.8V, 8V
185mOhm @ 1A, 8V
1.2V @ 1mA
1.1 nC @ 4.2 V
±12V
130 pF @ 10 V
-
1W (Ta)
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.