FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

IRF9362TRPBF MOSFET 2P-CH 30V 8A 8SO Infineon Technologies	44,599 In Stock	1 : ¥7.64000 Cut Tape (CT) 4,000 : ¥2.90672 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	Logic Level Gate	30V	8A	21mOhm @ 8A, 10V	2.4V @ 25µA	39nC @ 10V	1300pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SSM6N7002CFU,LF MOSFET 2N-CH 60V 0.17A US6 Toshiba Semiconductor and Storage	29,465 In Stock	1 : ¥1.81000 Cut Tape (CT) 3,000 : ¥0.36802 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	60V	170mA	3.9Ohm @ 100mA, 10V	2.1V @ 250µA	0.35nC @ 4.5V	17pF @ 10V	285mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.