Single FETs, MOSFETs

Results: 7
Manufacturer
Diodes IncorporatedDiotec SemiconductorMicrochip TechnologyonsemiVishay Siliconix
Packaging
BagBulkCut Tape (CT)Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
45 V60 V400 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)200mA (Tc)230mA (Ta)270mA (Ta)300mA (Tj)2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V10V
Rds On (Max) @ Id, Vgs
3.6Ohm @ 1.2A, 10V4Ohm @ 500mA, 10V5Ohm @ 200mA, 10V5Ohm @ 500mA, 10V14Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
2.4V @ 1mA3V @ 1mA3.5V @ 1mA4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V60 pF @ 10 V60 pF @ 25 V170 pF @ 25 V
Power Dissipation (Max)
350mW (Ta)400mW (Ta)625mW (Ta)700mW (Ta)1W (Tc)36W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
TO-220ABTO-92TO-92-3
Package / Case
TO-220-3TO-226-3, TO-92-3 (TO-226AA)TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-92-3(StandardBody),TO-226_straightlead
2N7000
MOSFET TO92 N 60V 0.2A 5OHM 150C
onsemi
44,692
In Stock
40,000
Factory
1 : ¥4.02000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
60 V
200mA (Ta)
4.5V, 10V
5Ohm @ 500mA, 10V
3V @ 1mA
-
±20V
50 pF @ 25 V
-
400mW (Ta)
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
BC327-16
2N7000
MOSFET TO-92 60V 0.2A
Diotec Semiconductor
130,926
In Stock
1 : ¥2.63000
Cut Tape (CT)
4,000 : ¥0.43797
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
N-Channel
MOSFET (Metal Oxide)
60 V
200mA (Ta)
4.5V, 10V
5Ohm @ 500mA, 10V
3V @ 1mA
-
±20V
60 pF @ 25 V
-
350mW (Ta)
150°C (TJ)
Through Hole
TO-92
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3(StandardBody),TO-226_straightlead
2N7000BU
MOSFET N-CH 60V 200MA TO92-3
onsemi
27,497
In Stock
10,000
Factory
1 : ¥2.96000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
60 V
200mA (Tc)
4.5V, 10V
5Ohm @ 500mA, 10V
3V @ 1mA
-
±20V
50 pF @ 25 V
-
400mW (Ta)
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
VN2106N3-G
MOSFET N-CH 60V 300MA TO92-3
Microchip Technology
3,970
In Stock
1 : ¥4.10000
Bag
-
Bag
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300mA (Tj)
5V, 10V
4Ohm @ 500mA, 10V
2.4V @ 1mA
-
±20V
50 pF @ 25 V
-
1W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-220AB
IRF710PBF
MOSFET N-CH 400V 2A TO220AB
Vishay Siliconix
6,581
In Stock
1 : ¥6.16000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
400 V
2A (Tc)
10V
3.6Ohm @ 1.2A, 10V
4V @ 250µA
17 nC @ 10 V
±20V
170 pF @ 25 V
-
36W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-92
BS170P
MOSFET N-CH 60V 270MA TO92-3
Diodes Incorporated
3,642
In Stock
4,000
Factory
1 : ¥6.40000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
60 V
270mA (Ta)
10V
5Ohm @ 200mA, 10V
3V @ 1mA
-
±20V
60 pF @ 10 V
-
625mW (Ta)
-55°C ~ 150°C (TJ)
Through Hole
TO-92
TO-226-3, TO-92-3 (TO-226AA)
TO-92
BS250P
MOSFET P-CH 45V 230MA E-LINE
Diodes Incorporated
5,965
In Stock
28,000
Factory
1 : ¥6.98000
Bulk
-
Bulk
Active
P-Channel
MOSFET (Metal Oxide)
45 V
230mA (Ta)
10V
14Ohm @ 200mA, 10V
3.5V @ 1mA
-
±20V
60 pF @ 10 V
-
700mW (Ta)
-55°C ~ 150°C (TJ)
Through Hole
TO-92
TO-226-3, TO-92-3 (TO-226AA)
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.