Single FETs, MOSFETs

Results: 2
Series
HEXFET®, StrongIRFET™OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
40 V100 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)240A (Tc)
Rds On (Max) @ Id, Vgs
0.75mOhm @ 100A, 10V8.3mOhm @ 73A, 10V
Vgs(th) (Max) @ Id
3.5V @ 75µA3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3980 pF @ 50 V13975 pF @ 25 V
Power Dissipation (Max)
125W (Tc)375W (Tc)
Supplier Device Package
D2PAK (7-Lead)PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263ABTO-263-7, D2PAK (6 Leads + Tab)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-263-7 DPak (6 LeadsTab)
IRFS7430TRL7PP
MOSFET N-CH 40V 240A D2PAK
Infineon Technologies
4,123
In Stock
1 : ¥20.44000
Cut Tape (CT)
800 : ¥17.59208
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
240A (Tc)
6V, 10V
0.75mOhm @ 100A, 10V
3.9V @ 250µA
460 nC @ 10 V
±20V
13975 pF @ 25 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-7, D2PAK (6 Leads + Tab)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB083N10N3GATMA1
MOSFET N-CH 100V 80A D2PAK
Infineon Technologies
4,685
In Stock
1 : ¥14.78000
Cut Tape (CT)
1,000 : ¥7.00231
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
80A (Tc)
6V, 10V
8.3mOhm @ 73A, 10V
3.5V @ 75µA
55 nC @ 10 V
±20V
3980 pF @ 50 V
-
125W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.