Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedInfineon Technologies
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)10.5A (Ta)
Rds On (Max) @ Id, Vgs
12mOhm @ 11A, 10V15mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25.1 nC @ 10 V110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1415 pF @ 15 V9250 pF @ 25 V
Power Dissipation (Max)
730mW (Ta)2.5W (Ta)
Supplier Device Package
8-SOU-DFN2020-6 (Type E)
Package / Case
6-PowerUDFN8-SOIC (0.154", 3.90mm Width)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
U-DFN2020-6 Type E
DMN3016LFDE-7
MOSFET N-CH 30V 10A 6UDFN
Diodes Incorporated
17,280
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥0.93176
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
10A (Ta)
4.5V, 10V
12mOhm @ 11A, 10V
2V @ 250µA
25.1 nC @ 10 V
±20V
1415 pF @ 15 V
-
730mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type E)
6-PowerUDFN
IRF7240TRPBF
MOSFET P-CH 40V 10.5A 8SO
Infineon Technologies
8,740
In Stock
1 : ¥11.82000
Cut Tape (CT)
4,000 : ¥4.90314
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
10.5A (Ta)
4.5V, 10V
15mOhm @ 10.5A, 10V
3V @ 250µA
110 nC @ 10 V
±20V
9250 pF @ 25 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.