Single FETs, MOSFETs

Results: 3
Series
-PowerTrench®QFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V150 V
Current - Continuous Drain (Id) @ 25°C
8.5A (Ta), 21A (Tc)20A (Ta)45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
4.6mOhm @ 20A, 10V27.5mOhm @ 7.5A, 10V40mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id
2V @ 13µA3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.8 nC @ 10 V94 nC @ 10 V260 nC @ 10 V
Vgs (Max)
±20V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 25 V3030 pF @ 25 V7540 pF @ 15 V
Power Dissipation (Max)
2.5W (Ta)3.8W (Ta), 24W (Tc)220W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-SOICLFPAK4 (5x6)TO-220-3
Package / Case
8-SOIC (0.154", 3.90mm Width)SOT-1023, 4-LFPAKTO-220-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-SOIC
FDS6681Z
MOSFET P-CH 30V 20A 8SOIC
onsemi
19,376
In Stock
1 : ¥17.24000
Cut Tape (CT)
2,500 : ¥7.79035
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
20A (Ta)
4.5V, 10V
4.6mOhm @ 20A, 10V
3V @ 250µA
260 nC @ 10 V
±25V
7540 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
TO-220-3
FQP45N15V2
MOSFET N-CH 150V 45A TO220-3
onsemi
329
In Stock
1 : ¥20.11000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
150 V
45A (Tc)
10V
40mOhm @ 22.5A, 10V
4V @ 250µA
94 nC @ 10 V
±30V
3030 pF @ 25 V
-
220W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
SOT 1023
NTMYS025N06CLTWG
MOSFET N-CH 60V 8.5A/21A 4LFPAK
onsemi
2,168
In Stock
6,000
Factory
1 : ¥13.96000
Cut Tape (CT)
3,000 : ¥6.29933
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
8.5A (Ta), 21A (Tc)
4.5V, 10V
27.5mOhm @ 7.5A, 10V
2V @ 13µA
5.8 nC @ 10 V
±20V
330 pF @ 25 V
-
3.8W (Ta), 24W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK4 (5x6)
SOT-1023, 4-LFPAK
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.