Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

DMG1013T-7 MOSFET P-CH 20V 460MA SOT523 Diodes Incorporated	362,071 In Stock 8,145,000 Factory	1 : ¥2.46000 Cut Tape (CT) 3,000 : ¥0.41074 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	460mA (Ta)	1.8V, 4.5V	700mOhm @ 350mA, 4.5V	1V @ 250µA	0.622 nC @ 4.5 V	±6V	59.76 pF @ 16 V	-	270mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
NDS331N MOSFET N-CH 20V 1.3A SUPERSOT3 onsemi	145,285 In Stock	1 : ¥3.61000 Cut Tape (CT) 3,000 : ¥1.20594 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1.3A (Ta)	2.7V, 4.5V	160mOhm @ 1.5A, 4.5V	1V @ 250µA	5 nC @ 4.5 V	±8V	162 pF @ 10 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IRLML6344TRPBF MOSFET N-CH 30V 5A MICRO3/SOT23 Infineon Technologies	122,788 In Stock	1 : ¥3.78000 Cut Tape (CT) 3,000 : ¥1.02907 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	5A (Ta)	2.5V, 4.5V	29mOhm @ 5A, 4.5V	1.1V @ 10µA	6.8 nC @ 4.5 V	±12V	650 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.