Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.Toshiba Semiconductor and Storage
Series
-U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
1.4A (Ta)6A (Ta)
Rds On (Max) @ Id, Vgs
29.8mOhm @ 3A, 4.5V250mOhm @ 1.4A, 4.5V
Vgs(th) (Max) @ Id
950mV @ 250µA1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
2.7 nC @ 4.5 V12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
89 pF @ 15 V840 pF @ 10 V
Power Dissipation (Max)
350mW (Ta), 6.25W (Tc)1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
DFN1006B-3SOT-23F
Package / Case
3-XFDFNSOT-23-3 Flat Leads
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
767,389
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.73442
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
6A (Ta)
1.5V, 4.5V
29.8mOhm @ 3A, 4.5V
1V @ 1mA
12.8 nC @ 4.5 V
±8V
840 pF @ 10 V
-
1W (Ta)
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
3-XQFN
PMZB200UNEYL
MOSFET N-CH 30V 1.4A DFN1006B-3
Nexperia USA Inc.
25,890
In Stock
1 : ¥3.28000
Cut Tape (CT)
10,000 : ¥0.52338
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
1.4A (Ta)
1.5V, 4.5V
250mOhm @ 1.4A, 4.5V
950mV @ 250µA
2.7 nC @ 4.5 V
±8V
89 pF @ 15 V
-
350mW (Ta), 6.25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN1006B-3
3-XFDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.