Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedInfineon TechnologiesonsemiToshiba Semiconductor and StorageVishay Siliconix
Series
-OptiMOS™U-MOSIX-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
240mA (Ta)3.8A (Ta)50A (Tc)107A (Tc)150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
1.24mOhm @ 50A, 10V3.1mOhm @ 40A, 10V12.6mOhm @ 50A, 10V65mOhm @ 3.8A, 10V3Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.1V @ 250µA2.4V @ 500µA2.5V @ 250µA4V @ 85µA
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 4.5 V5.2 nC @ 4.5 V35 nC @ 10 V51 nC @ 10 V74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
21 pF @ 5 V563 pF @ 25 V2100 pF @ 25 V3670 pF @ 25 V7200 pF @ 20 V
Power Dissipation (Max)
350mW (Ta)960mW (Ta), 170W (Tc)1.08W (Ta)58W (Tc)68W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)175°C
Supplier Device Package
8-SOP Advance (5x5.75)8-WDFN (3.3x3.3)PG-TO252-3-313SOT-23-3SOT-23-3 (TO-236)
Package / Case
8-PowerTDFN8-PowerWDFNTO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMP3099L-7
MOSFET P-CH 30V 3.8A SOT23
Diodes Incorporated
289,607
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.49040
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
3.8A (Ta)
4.5V, 10V
65mOhm @ 3.8A, 10V
2.1V @ 250µA
5.2 nC @ 4.5 V
±20V
563 pF @ 25 V
-
1.08W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
3,094
In Stock
1 : ¥17.65000
Cut Tape (CT)
5,000 : ¥4.91562
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
150A (Tc)
4.5V, 10V
1.24mOhm @ 50A, 10V
2.4V @ 500µA
74 nC @ 10 V
±20V
7200 pF @ 20 V
-
960mW (Ta), 170W (Tc)
175°C
-
-
Surface Mount
8-SOP Advance (5x5.75)
8-PowerTDFN
SOT-23-3
2N7002E-T1-E3
MOSFET N-CH 60V 240MA SOT23-3
Vishay Siliconix
3,876
In Stock
1 : ¥5.09000
Cut Tape (CT)
3,000 : ¥1.71229
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
60 V
240mA (Ta)
4.5V, 10V
3Ohm @ 250mA, 10V
2.5V @ 250µA
0.6 nC @ 4.5 V
±20V
21 pF @ 5 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
8-WDFN
NVTFS5C453NLWFTAG
MOSFET N-CH 40V 107A 8WDFN
onsemi
1,395
In Stock
36,000
Factory
1 : ¥13.71000
Cut Tape (CT)
1,500 : ¥6.49390
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
107A (Tc)
4.5V, 10V
3.1mOhm @ 40A, 10V
2V @ 250µA
35 nC @ 10 V
±20V
2100 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
TO252-3
IPD50P04P413ATMA1
MOSFET P-CH 40V 50A TO252-3
Infineon Technologies
0
In Stock
1 : ¥11.25000
Cut Tape (CT)
2,500 : ¥4.65867
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
P-Channel
MOSFET (Metal Oxide)
40 V
50A (Tc)
10V
12.6mOhm @ 50A, 10V
4V @ 85µA
51 nC @ 10 V
±20V
3670 pF @ 25 V
-
58W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO252-3-313
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.