Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesPanjit International Inc.Rohm SemiconductorVishay Siliconix
Series
-HEXFET®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
45 V55 V100 V200 V
Current - Continuous Drain (Id) @ 25°C
170mA (Ta)2A (Ta)5.1A (Ta)13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
57.5mOhm @ 3.1A, 10V145mOhm @ 7.5A, 10V180mOhm @ 2A, 4.5V6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 1mA2.5V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.8 nC @ 10 V4.1 nC @ 4.5 V14 nC @ 10 V85 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
45 pF @ 25 V200 pF @ 10 V340 pF @ 25 V2600 pF @ 25 V
Power Dissipation (Max)
500mW (Ta)700mW (Ta)1W (Ta)68W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
PowerPAK® SO-8SOT-223SOT-23TSMT3
Package / Case
PowerPAK® SO-8SC-96TO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPak SO-8L
SQJ454EP-T1_GE3
MOSFET N-CH 200V 13A PPAK SO-8
Vishay Siliconix
11,062
In Stock
1 : ¥10.34000
Cut Tape (CT)
3,000 : ¥4.27271
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
13A (Tc)
4.5V, 10V
145mOhm @ 7.5A, 10V
2.5V @ 250µA
85 nC @ 10 V
±20V
2600 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SOT223-3L
IRFL024ZTRPBF
MOSFET N-CH 55V 5.1A SOT223
Infineon Technologies
96,603
In Stock
1 : ¥4.02000
Cut Tape (CT)
2,500 : ¥1.88622
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
5.1A (Ta)
10V
57.5mOhm @ 3.1A, 10V
4V @ 250µA
14 nC @ 10 V
±20V
340 pF @ 25 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223
TO-261-4, TO-261AA
TSMT3
RTR020N05HZGTL
MOSFET N-CH 45V 2A TSMT3
Rohm Semiconductor
5,764
In Stock
1 : ¥5.34000
Cut Tape (CT)
3,000 : ¥1.79789
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
45 V
2A (Ta)
2.5V, 4.5V
180mOhm @ 2A, 4.5V
1.5V @ 1mA
4.1 nC @ 4.5 V
±12V
200 pF @ 10 V
-
700mW (Ta)
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TSMT3
SC-96
29,705
In Stock
1 : ¥1.64000
Cut Tape (CT)
3,000 : ¥0.32207
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
170mA (Ta)
4.5V, 10V
6Ohm @ 170mA, 10V
2.5V @ 250µA
1.8 nC @ 10 V
±20V
45 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.