Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon Technologiesonsemi
Series
-StrongIRFET™ 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
80 V100 V
Current - Continuous Drain (Id) @ 25°C
13A (Ta), 84A (Tc)33A (Ta), 294A (Tc)
Rds On (Max) @ Id, Vgs
1.75mOhm @ 150A, 10V5.9mOhm @ 23A, 10V
Vgs(th) (Max) @ Id
3.8V @ 216µA4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2040 pF @ 40 V9300 pF @ 50 V
Power Dissipation (Max)
2.7W (Ta), 100W (Tc)3.8W (Ta), 300W (Tc)
Supplier Device Package
8-PQFN (3.3x3.3)PG-HSOF-8-10
Package / Case
8-PowerSFN8-PowerWDFN
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
1,249
In Stock
1 : ¥34.32000
Cut Tape (CT)
1,800 : ¥16.02654
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
33A (Ta), 294A (Tc)
6V, 10V
1.75mOhm @ 150A, 10V
3.8V @ 216µA
195 nC @ 10 V
±20V
9300 pF @ 50 V
-
3.8W (Ta), 300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-8-10
8-PowerSFN
8-WDFN
NTTFS5D9N08HTWG
MOSFET N-CH 80V 13A/84A 8PQFN
onsemi
3,280
In Stock
1 : ¥15.84000
Cut Tape (CT)
3,000 : ¥7.12866
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
13A (Ta), 84A (Tc)
6V, 10V
5.9mOhm @ 23A, 10V
4V @ 120µA
31 nC @ 10 V
±20V
2040 pF @ 40 V
-
2.7W (Ta), 100W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PQFN (3.3x3.3)
8-PowerWDFN
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.