Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

2N7002LT1G MOSFET N-CH 60V 115MA SOT23-3 onsemi	524,451 In Stock	1 : ¥2.22000 Cut Tape (CT) 3,000 : ¥0.37018 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	115mA (Tc)	5V, 10V	7.5Ohm @ 500mA, 10V	2.5V @ 250µA	-	±20V	50 pF @ 25 V	-	225mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
DMG2305UX-7 MOSFET P-CH 20V 4.2A SOT23 Diodes Incorporated	162,269 In Stock 2,334,000 Factory	1 : ¥3.12000 Cut Tape (CT) 3,000 : ¥0.52630 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	1.8V, 4.5V	52mOhm @ 4.2A, 4.5V	900mV @ 250µA	10.2 nC @ 4.5 V	±8V	808 pF @ 15 V	-	1.4W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
PMZ290UNE2YL MOSFET N-CH 20V 1.2A DFN1006-3 Nexperia USA Inc.	118,115 In Stock	1 : ¥2.13000 Cut Tape (CT) 10,000 : ¥0.29145 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1.2A (Ta)	1.5V, 4.5V	320mOhm @ 1.2A, 4.5V	950mV @ 250µA	1.4 nC @ 4.5 V	±8V	46 pF @ 10 V	-	350mW (Ta), 5.43W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-883	SC-101, SOT-883

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.