Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedonsemiToshiba Semiconductor and Storage
Series
-U-MOSVI
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V60 V
Current - Continuous Drain (Id) @ 25°C
200mA (Tc)230mA (Ta)6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V1.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
29.8mOhm @ 3A, 4.5V30mOhm @ 7A, 10V3Ohm @ 100mA, 4.5V5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1V @ 1mA1V @ 250µA2V @ 250µA3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
11.4 nC @ 10 V12.8 nC @ 4.5 V
Vgs (Max)
±8V±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
14.1 pF @ 15 V50 pF @ 25 V498 pF @ 15 V840 pF @ 10 V
Power Dissipation (Max)
300mW (Ta)400mW (Ta)1W (Ta)1.75W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
SOT-23FSOT-523TO-92-3TSOT-26
Package / Case
SOT-23-3 Flat LeadsSOT-23-6 Thin, TSOT-23-6SOT-523TO-226-3, TO-92-3 (TO-226AA)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
768,922
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.73442
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
6A (Ta)
1.5V, 4.5V
29.8mOhm @ 3A, 4.5V
1V @ 1mA
12.8 nC @ 4.5 V
±8V
840 pF @ 10 V
-
1W (Ta)
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SOT-523
DMN26D0UT-7
MOSFET N-CH 20V 230MA SOT523
Diodes Incorporated
70,310
In Stock
2,253,000
Factory
1 : ¥2.63000
Cut Tape (CT)
3,000 : ¥0.44806
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
230mA (Ta)
1.2V, 4.5V
3Ohm @ 100mA, 4.5V
1V @ 250µA
-
±10V
14.1 pF @ 15 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
TO-92-3(StandardBody),TO-226_straightlead
2N7000BU
MOSFET N-CH 60V 200MA TO92-3
onsemi
27,487
In Stock
10,000
Factory
1 : ¥2.96000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
60 V
200mA (Tc)
4.5V, 10V
5Ohm @ 500mA, 10V
3V @ 1mA
-
±20V
50 pF @ 25 V
-
400mW (Ta)
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TSOT-26
DMG6402LVT-7
MOSFET N-CH 30V 6A TSOT26
Diodes Incorporated
25,677
In Stock
531,000
Factory
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.68119
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
6A (Ta)
4.5V, 10V
30mOhm @ 7A, 10V
2V @ 250µA
11.4 nC @ 10 V
±20V
498 pF @ 15 V
-
1.75W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
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of 4

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.