Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
OptiMOS™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
40 V150 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)174A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V8V, 10V
Rds On (Max) @ Id, Vgs
4.4mOhm @ 50A, 10V14.4mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA4.6V @ 221µA
Gate Charge (Qg) (Max) @ Vgs
17.5 nC @ 10 V84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
880 pF @ 25 V6500 pF @ 75 V
Power Dissipation (Max)
13.6W (Tc)300W (Tc)
Mounting Type
Surface MountSurface Mount, Wettable Flank
Supplier Device Package
PG-HSOF-8PowerPAK®SC-70W-6
Package / Case
6-PowerVDFN8-PowerSFN
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPAK SC-701W-6L Single
SQA440CEJW-T1_GE3
AUTOMOTIVE N-CHANNEL 40 V (D-S)
Vishay Siliconix
9,260
In Stock
1 : ¥4.52000
Cut Tape (CT)
3,000 : ¥1.52147
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
9A (Tc)
4.5V, 10V
14.4mOhm @ 5A, 10V
2.2V @ 250µA
17.5 nC @ 10 V
±20V
880 pF @ 25 V
-
13.6W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount, Wettable Flank
PowerPAK®SC-70W-6
6-PowerVDFN
1,960
In Stock
1 : ¥50.49000
Cut Tape (CT)
2,000 : ¥26.81684
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
174A (Tc)
8V, 10V
4.4mOhm @ 50A, 10V
4.6V @ 221µA
84 nC @ 10 V
±20V
6500 pF @ 75 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HSOF-8
8-PowerSFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.