Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

RUM001L02T2CL MOSFET N-CH 20V 100MA VMT3 Rohm Semiconductor	725,116 In Stock This product has a maximum purchase limit	1 : ¥2.22000 Cut Tape (CT) 8,000 : ¥0.34654 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	100mA (Ta)	1.2V, 4.5V	3.5Ohm @ 100mA, 4.5V	1V @ 100µA	-	±8V	7.1 pF @ 10 V	-	150mW (Ta)	150°C (TJ)	Surface Mount	VMT3	SOT-723
RS1L151ATTB1 PCH -60V -56A, HSOP8, POWER MOSF Rohm Semiconductor	9,542 In Stock	1 : ¥22.66000 Cut Tape (CT) 2,500 : ¥11.02813 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	56A (Tc)	4.5V, 10V	11.3mOhm @ 15A, 10V	2.5V @ 1mA	130 nC @ 10 V	±20V	6900 pF @ 30 V	-	3W (Ta)	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
AUIRF5210STRL MOSFET P-CH 100V 38A D2PAK Infineon Technologies	0 In Stock	1 : ¥50.33000 Cut Tape (CT) 800 : ¥31.71653 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT)	Obsolete	P-Channel	MOSFET (Metal Oxide)	100 V	38A (Tc)	10V	60mOhm @ 38A, 10V	4V @ 250µA	230 nC @ 10 V	±20V	2780 pF @ 25 V	-	3.1W (Ta), 170W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.