Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

VN2222LL-G MOSFET N-CH 60V 230MA TO92-3 Microchip Technology	9,807 In Stock	1 : ¥4.43000 Bag	-	Bag	Active	N-Channel	MOSFET (Metal Oxide)	60 V	230mA (Tj)	5V, 10V	7.5Ohm @ 500mA, 10V	2.5V @ 1mA	-	±30V	60 pF @ 25 V	-	400mW (Ta), 1W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
IRF9Z34NPBF MOSFET P-CH 55V 19A TO220AB Infineon Technologies	72,537 In Stock	1 : ¥5.42000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	55 V	19A (Tc)	10V	100mOhm @ 10A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	620 pF @ 25 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
TP2104N3-G MOSFET P-CH 40V 175MA TO92-3 Microchip Technology	1,613 In Stock	1 : ¥6.40000 Bag	-	Bag	Active	P-Channel	MOSFET (Metal Oxide)	40 V	175mA (Tj)	4.5V, 10V	6Ohm @ 500mA, 10V	2V @ 1mA	-	±20V	60 pF @ 25 V	-	740mW (Ta)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TN0702N3-G MOSFET N-CH 20V 530MA TO92-3 Microchip Technology	2,240 In Stock	1 : ¥12.48000 Bag	-	Bag	Active	N-Channel	MOSFET (Metal Oxide)	20 V	530mA (Tj)	2V, 5V	1.3Ohm @ 500mA, 5V	1V @ 1mA	-	±20V	200 pF @ 20 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TP2540N3-G MOSFET P-CH 400V 86MA TO92-3 Microchip Technology	1,000 In Stock	1 : ¥14.61000 Bag	-	Bag	Active	P-Channel	MOSFET (Metal Oxide)	400 V	86mA (Tj)	4.5V, 10V	25Ohm @ 100mA, 10V	2.4V @ 1mA	-	±20V	125 pF @ 25 V	-	740mW (Ta)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TP2635N3-G MOSFET P-CH 350V 180MA TO92-3 Microchip Technology	346 In Stock	1 : ¥16.42000 Bag	-	Bag	Active	P-Channel	MOSFET (Metal Oxide)	350 V	180mA (Tj)	2.5V, 10V	15Ohm @ 300mA, 10V	2V @ 1mA	-	±20V	300 pF @ 25 V	-	1W (Ta)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
MTA30N06E N-CHANNEL POWER MOSFET Motorola	5,283 Marketplace	Unavailable Unavailable in your selected currency	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	30A (Tc)	-	-	-	-	-	-	-	50W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
TN2106N3-G MOSFET N-CH 60V 300MA TO92-3 Microchip Technology	755 In Stock	1 : ¥5.58000 Bag	-	Bag	Active	N-Channel	MOSFET (Metal Oxide)	60 V	300mA (Tj)	4.5V, 10V	2.5Ohm @ 500mA, 10V	2V @ 1mA	-	±20V	50 pF @ 25 V	-	740mW (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.