Single FETs, MOSFETs

Results: 2
Manufacturer
Littelfuse Inc.Texas Instruments
Series
Linear L2™NexFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
9.9mOhm @ 12A, 10V11mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.7V @ 250µA4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
14.5 nC @ 10 V540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1150 pF @ 30 V23000 pF @ 25 V
Power Dissipation (Max)
66W (Tc)1040W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-VSONP (3x3.3)TO-264 (IXTK)
Package / Case
8-PowerVDFNTO-264-3, TO-264AA
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
CSD18543Q3A
MOSFET N-CH 60V 60A 8VSON
Texas Instruments
35,427
In Stock
1 : ¥7.47000
Cut Tape (CT)
2,500 : ¥2.82886
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
60A (Tc)
4.5V, 10V
9.9mOhm @ 12A, 10V
2.7V @ 250µA
14.5 nC @ 10 V
±20V
1150 pF @ 30 V
-
66W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSONP (3x3.3)
8-PowerVDFN
TO-264
IXTK200N10L2
MOSFET N-CH 100V 200A TO264
Littelfuse Inc.
519
In Stock
1 : ¥306.13000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
200A (Tc)
10V
11mOhm @ 100A, 10V
4.5V @ 3mA
540 nC @ 10 V
±20V
23000 pF @ 25 V
-
1040W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-264 (IXTK)
TO-264-3, TO-264AA
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.