Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesSTMicroelectronicsVishay Siliconix
Series
-OptiMOS™ 5TrenchFET®TrenchFET® Gen IVTrenchFET® Gen V
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
30 V80 V650 V
Current - Continuous Drain (Id) @ 25°C
24A (Tc)42A (Ta), 408A (Tc)85.9A (Ta), 350.8A (Tc)90A (Tc)500A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V18V
Rds On (Max) @ Id, Vgs
0.47mOhm @ 20A, 10V0.94mOhm @ 15A, 10V1.1mOhm @ 150A, 10V21mOhm @ 10.5A, 10V26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
2.2V @ 250µA3V @ 250µA3.5V @ 250µA3.8V @ 280µA5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V152 nC @ 10 V157 nC @ 18 V180 nC @ 10 V223 nC @ 10 V
Vgs (Max)
+16V, -12V±20V+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 15 V3300 pF @ 400 V8095 pF @ 25 V8960 pF @ 15 V17000 pF @ 40 V
Power Dissipation (Max)
3.5W (Ta), 27.8W (Tc)3.8W (Ta), 375W (Tc)6.25W (Ta), 104.1W (Tc)330W (Tc)500W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
H2PAK-7PG-HDSOP-16-2PowerPAK® 1212-8PowerPAK® SO-8
Package / Case
16-PowerSOP ModulePowerPAK® 1212-8PowerPAK® SO-8TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPAK 1212-8
SI7619DN-T1-GE3
MOSFET P-CH 30V 24A PPAK1212-8
Vishay Siliconix
114,120
In Stock
1 : ¥6.57000
Cut Tape (CT)
3,000 : ¥2.48136
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
24A (Tc)
4.5V, 10V
21mOhm @ 10.5A, 10V
3V @ 250µA
50 nC @ 10 V
±20V
1350 pF @ 15 V
-
3.5W (Ta), 27.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
PowerPAK SO-8 Single
SIR500DP-T1-RE3
N-CHANNEL 30 V (D-S) 150C MOSFET
Vishay Siliconix
6,994
In Stock
1 : ¥12.97000
Cut Tape (CT)
3,000 : ¥5.83725
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
85.9A (Ta), 350.8A (Tc)
4.5V, 10V
0.47mOhm @ 20A, 10V
2.2V @ 250µA
180 nC @ 10 V
+16V, -12V
8960 pF @ 15 V
-
6.25W (Ta), 104.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
2,464
In Stock
1 : ¥63.46000
Cut Tape (CT)
1,800 : ¥36.01692
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
42A (Ta), 408A (Tc)
6V, 10V
1.1mOhm @ 150A, 10V
3.8V @ 280µA
223 nC @ 10 V
±20V
17000 pF @ 40 V
-
3.8W (Ta), 375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-HDSOP-16-2
16-PowerSOP Module
PowerPAK-SO-8L
SQJ126EP-T1_GE3
AUTOMOTIVE N-CHANNEL 30 V (D-S)
Vishay Siliconix
2,849
In Stock
1 : ¥13.63000
Cut Tape (CT)
3,000 : ¥6.15705
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
500A (Tc)
10V
0.94mOhm @ 15A, 10V
3.5V @ 250µA
152 nC @ 10 V
±20V
8095 pF @ 25 V
-
500W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
TO-263-7
SCTH90N65G2V-7
SICFET N-CH 650V 90A H2PAK-7
STMicroelectronics
34
In Stock
1 : ¥276.92000
Cut Tape (CT)
1,000 : ¥180.77825
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
90A (Tc)
18V
26mOhm @ 50A, 18V
5V @ 1mA
157 nC @ 18 V
+22V, -10V
3300 pF @ 400 V
-
330W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
H2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.