Single FETs, MOSFETs

Results: 2
Manufacturer
Linear Integrated Systems, Inc.Vishay Siliconix
Series
-SD213
Packaging
BulkTube
Drain to Source Voltage (Vdss)
10 V250 V
Current - Continuous Drain (Id) @ 25°C
50mA (Ta)14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 25V10V
Rds On (Max) @ Id, Vgs
280mOhm @ 8.4A, 10V45Ohm @ 1mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 1µA4V @ 250µA
Vgs (Max)
±20V+25V, -15V
Power Dissipation (Max)
300mW (Ta)125W (Tc)
Operating Temperature
-55°C ~ 125°C (TJ)-55°C ~ 150°C (TJ)
Supplier Device Package
TO-220ABTO-72-4
Package / Case
TO-206AF, TO-72-4 Metal CanTO-220-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB
IRF644PBF
MOSFET N-CH 250V 14A TO220AB
Vishay Siliconix
1,273
In Stock
1 : ¥13.63000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
14A (Tc)
10V
280mOhm @ 8.4A, 10V
4V @ 250µA
68 nC @ 10 V
±20V
1300 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SD213DE-TO-72-4L
SD213DE TO-72 4L
HIGH SPEED N-CHANNEL LATERAL DMO
Linear Integrated Systems, Inc.
480
In Stock
1 : ¥57.80000
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
10 V
50mA (Ta)
5V, 25V
45Ohm @ 1mA, 10V
1.5V @ 1µA
-
+25V, -15V
-
-
300mW (Ta)
-55°C ~ 125°C (TJ)
Through Hole
TO-72-4
TO-206AF, TO-72-4 Metal Can
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.