Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
HEXFET®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
2.6A (Ta)3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4.5V
Rds On (Max) @ Id, Vgs
66mOhm @ 2.5A, 4.5V135mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs
2.9 nC @ 4.5 V23 nC @ 8 V
Vgs (Max)
±8V±12V
Input Capacitance (Ciss) (Max) @ Vds
220 pF @ 16 V561 pF @ 10 V
Power Dissipation (Max)
960mW (Ta), 1.7W (Tc)1.3W (Ta)
Supplier Device Package
Micro3™/SOT-23SOT-23-3 (TO-236)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2367DS-T1-GE3
MOSFET P-CH 20V 3.8A SOT23-3
Vishay Siliconix
7,898
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥1.10070
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3.8A (Tc)
1.8V, 4.5V
66mOhm @ 2.5A, 4.5V
1V @ 250µA
23 nC @ 8 V
±8V
561 pF @ 10 V
-
960mW (Ta), 1.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
IRLML2246TRPBF
MOSFET P-CH 20V 2.6A SOT23
Infineon Technologies
35,742
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥0.83710
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
2.6A (Ta)
2.5V, 4.5V
135mOhm @ 2.6A, 4.5V
1.1V @ 10µA
2.9 nC @ 4.5 V
±12V
220 pF @ 16 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.