Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
HEXFET®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
3.6A (Ta)12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
9.4mOhm @ 12A, 10V65mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V39 nC @ 10 V
Power Dissipation (Max)
1.5W (Ta)2.5W (Ta)
Supplier Device Package
8-SOPowerPAK® 1212-8
Package / Case
8-SOIC (0.154", 3.90mm Width)PowerPAK® 1212-8
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPAK 1212-8
SI7415DN-T1-E3
MOSFET P-CH 60V 3.6A PPAK1212-8
Vishay Siliconix
91,430
In Stock
1 : ¥12.64000
Cut Tape (CT)
3,000 : ¥5.69276
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
3.6A (Ta)
4.5V, 10V
65mOhm @ 5.7A, 10V
3V @ 250µA
25 nC @ 10 V
±20V
-
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
IRF7855TRPBF
MOSFET N-CH 60V 12A 8SO
Infineon Technologies
13,910
In Stock
1 : ¥14.37000
Cut Tape (CT)
4,000 : ¥6.46805
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
12A (Ta)
10V
9.4mOhm @ 12A, 10V
4.9V @ 100µA
39 nC @ 10 V
±20V
1560 pF @ 25 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.