Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesSTMicroelectronics
Series
HEXFET®MESH OVERLAY™MESH OVERLAY™ III
Product Status
ActiveObsolete
Drain to Source Voltage (Vdss)
33 V100 V
Current - Continuous Drain (Id) @ 25°C
17A (Tc)62A (Tc)80A (Tc)
Rds On (Max) @ Id, Vgs
11mOhm @ 40A, 10V15mOhm @ 30A, 10V90mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V47 nC @ 10 V50 nC @ 10 V
Vgs (Max)
±20VClamped
Input Capacitance (Ciss) (Max) @ Vds
920 pF @ 25 V1330 pF @ 25 V1860 pF @ 25 V
Power Dissipation (Max)
70W (Tc)110W (Tc)
Supplier Device Package
TO-220TO-220AB
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRF530NPBF
MOSFET N-CH 100V 17A TO220AB
Infineon Technologies
36,308
In Stock
1 : ¥7.47000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
17A (Tc)
10V
90mOhm @ 9A, 10V
4V @ 250µA
37 nC @ 10 V
±20V
920 pF @ 25 V
-
70W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220-3
STP62NS04Z
MOSFET N-CH 33V 62A TO220AB
STMicroelectronics
0
In Stock
1,000 : ¥6.06672
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
33 V
62A (Tc)
10V
15mOhm @ 30A, 10V
4V @ 250µA
47 nC @ 10 V
Clamped
1330 pF @ 25 V
-
110W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
TO-220-3
STP75NS04Z
MOSFET N-CH 33V 80A TO220AB
STMicroelectronics
0
In Stock
1,000 : ¥7.94266
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
33 V
80A (Tc)
10V
11mOhm @ 40A, 10V
4V @ 250µA
50 nC @ 10 V
Clamped
1860 pF @ 25 V
-
110W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
Showing
of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.