Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedToshiba Semiconductor and Storage
Series
-U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
590mA (Ta)3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4V, 10V
Rds On (Max) @ Id, Vgs
134mOhm @ 1A, 10V495mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250µA (Typ)2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
1.54 nC @ 8 V15.1 nC @ 10 V
Vgs (Max)
±8V+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds
80 pF @ 10 V660 pF @ 10 V
Power Dissipation (Max)
240mW (Ta)2W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C
Supplier Device Package
SOT-23FSOT-523
Package / Case
SOT-23-3 Flat LeadsSOT-523
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-523
DMP21D0UT-7
MOSFET P-CH 20V 590MA SOT523
Diodes Incorporated
281,220
In Stock
891,000
Factory
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.66248
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
590mA (Ta)
1.8V, 4.5V
495mOhm @ 400mA, 4.5V
700mV @ 250µA (Typ)
1.54 nC @ 8 V
±8V
80 pF @ 10 V
-
240mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
114,901
In Stock
1 : ¥4.43000
Cut Tape (CT)
3,000 : ¥0.99527
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
3.5A (Ta)
4V, 10V
134mOhm @ 1A, 10V
2V @ 1mA
15.1 nC @ 10 V
+10V, -20V
660 pF @ 10 V
-
2W (Ta)
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.