FET, MOSFET Arrays

Results: 2
Manufacturer
Diodes IncorporatedToshiba Semiconductor and Storage
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 N-Channel (Dual)2 P-Channel (Dual)
FET Feature
-Logic Level Gate
Drain to Source Voltage (Vdss)
50V60V
Current - Continuous Drain (Id) @ 25°C
130mA300mA
Rds On (Max) @ Id, Vgs
1.5Ohm @ 100mA, 10V10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id
2V @ 1mA2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.6nC @ 4.5V-
Input Capacitance (Ciss) (Max) @ Vds
40pF @ 10V45pF @ 25V
Power - Max
285mW300mW
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-363US6
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
425,966
In Stock
1 : ¥1.72000
Cut Tape (CT)
3,000 : ¥0.33909
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
-
60V
300mA
1.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.6nC @ 4.5V
40pF @ 10V
285mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SOT 363
BSS84DW-7-F
MOSFET 2P-CH 50V 0.13A SOT363
Diodes Incorporated
80,550
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.78319
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 P-Channel (Dual)
Logic Level Gate
50V
130mA
10Ohm @ 100mA, 5V
2V @ 1mA
-
45pF @ 25V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
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of 2

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.