Single FETs, MOSFETs

Results: 6
Manufacturer
Diodes IncorporatedInfineon TechnologiesLittelfuse Inc.Microchip TechnologyonsemiVishay Siliconix
Series
-HEXFET®Polar
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
55 V60 V400 V450 V1000 V
Current - Continuous Drain (Id) @ 25°C
75mA (Ta)115mA (Tc)260mA (Tj)1.7A (Tc)2A (Tc)19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V10V
Rds On (Max) @ Id, Vgs
100mOhm @ 10A, 10V3.6Ohm @ 1A, 10V7.5Ohm @ 500mA, 10V12Ohm @ 500mA, 10V150Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA2.5V @ 250µA4V @ 250µA4.5V @ 100µA4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V24.3 nC @ 10 V35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V120 pF @ 25 V125 pF @ 25 V170 pF @ 25 V620 pF @ 25 V655 pF @ 25 V
Power Dissipation (Max)
225mW (Ta)1.6W (Ta)2W (Ta)2.5W (Ta), 25W (Tc)3.8W (Ta), 68W (Tc)86W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
D2PAKDPAKSOT-223-3SOT-23-3 (TO-236)TO-243AA (SOT-89)TO-252AA
Package / Case
TO-236-3, SC-59, SOT-23-3TO-243AATO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AATO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
6Results

Showing
of 6
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
2N7002LT1G
MOSFET N-CH 60V 115MA SOT23-3
onsemi
691,264
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37018
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Tc)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9Z34NSTRLPBF
MOSFET P-CH 55V 19A D2PAK
Infineon Technologies
3,295
In Stock
1 : ¥10.51000
Cut Tape (CT)
800 : ¥5.65296
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
55 V
19A (Tc)
10V
100mOhm @ 10A, 10V
4V @ 250µA
35 nC @ 10 V
±20V
620 pF @ 25 V
-
3.8W (Ta), 68W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D-PAK (TO-252AA)
IRFR310TRPBF
MOSFET N-CH 400V 1.7A DPAK
Vishay Siliconix
11,423
In Stock
1 : ¥9.28000
Cut Tape (CT)
2,000 : ¥3.83583
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
400 V
1.7A (Tc)
10V
3.6Ohm @ 1A, 10V
4V @ 250µA
12 nC @ 10 V
±20V
170 pF @ 25 V
-
2.5W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-3
IXTY2N100P
MOSFET N-CH 1000V 2A TO252
Littelfuse Inc.
1,065
In Stock
1,190
Factory
1 : ¥27.17000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
2A (Tc)
10V
7.5Ohm @ 500mA, 10V
4.5V @ 100µA
24.3 nC @ 10 V
±20V
655 pF @ 25 V
-
86W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SOT-223-3
ZVP0545GTA
MOSFET P-CH 450V 75MA SOT223
Diodes Incorporated
3,509
In Stock
1 : ¥11.82000
Cut Tape (CT)
1,000 : ¥3.42595
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
P-Channel
MOSFET (Metal Oxide)
450 V
75mA (Ta)
10V
150Ohm @ 50mA, 10V
4.5V @ 1mA
-
±20V
120 pF @ 25 V
-
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-3
TO-261-4, TO-261AA
C04-029 MB
TN2540N8-G
MOSFET N-CH 400V 260MA TO243AA
Microchip Technology
0
In Stock
Check Lead Time
1 : ¥13.71000
Cut Tape (CT)
2,000 : ¥10.42650
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
400 V
260mA (Tj)
4.5V, 10V
12Ohm @ 500mA, 10V
2V @ 1mA
-
±20V
125 pF @ 25 V
-
1.6W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA (SOT-89)
TO-243AA
Showing
of 6

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.