Single FETs, MOSFETs

Results: 4

Filters

Stacked

Scrolling

Showing

of 4

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSC350N20NSFDATMA1 MOSFET N-CH 200V 35A TDSON-8-1 Infineon Technologies	10,594 In Stock	1 : ¥24.14000 Cut Tape (CT) 5,000 : ¥11.26590 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	35A (Tc)	10V	35mOhm @ 35A, 10V	4V @ 90µA	30 nC @ 10 V	±20V	2410 pF @ 100 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-1	8-PowerTDFN
IPP320N20N3GXKSA1 MOSFET N-CH 200V 34A TO220-3 Infineon Technologies	5,159 In Stock	1 : ¥27.26000 Tube	OptiMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	34A (Tc)	10V	32mOhm @ 34A, 10V	4V @ 90µA	29 nC @ 10 V	±20V	2350 pF @ 100 V	-	136W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
SUM70030E-GE3 MOSFET N-CH 100V 150A TO263 Vishay Siliconix	3,595 In Stock	1 : ¥28.98000 Cut Tape (CT) 800 : ¥17.51644 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	150A (Tc)	7.5V, 10V	2.88mOhm @ 30A, 10V	4V @ 250µA	214 nC @ 10 V	±20V	10870 pF @ 50 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTP44P15T MOSFET P-CH 150V 44A TO220AB Littelfuse Inc.	5 In Stock	1 : ¥49.92000 Tube	TrenchP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	150 V	44A (Tc)	10V	65mOhm @ 500mA, 10V	4V @ 250µA	175 nC @ 10 V	±15V	13400 pF @ 25 V	-	298W (Tc)	-	Through Hole	TO-220-3	TO-220-3

Showing

of 4

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.