Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

2N7002,215 MOSFET N-CH 60V 300MA TO236AB Nexperia USA Inc.	586,701 In Stock	1 : ¥2.22000 Cut Tape (CT) 3,000 : ¥0.37855 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	300mA (Tc)	10V	5Ohm @ 500mA, 10V	2.5V @ 250µA	-	±30V	50 pF @ 10 V	-	830mW (Ta)	-65°C ~ 150°C (TJ)	-	-	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
SQ2337ES-T1_BE3 MOSFET P-CH 80V 2.2A SOT23-3 Vishay Siliconix	295,032 In Stock	1 : ¥5.42000 Cut Tape (CT) 3,000 : ¥1.78768 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	80 V	2.2A (Tc)	6V, 10V	290mOhm @ 1.2A, 10V	2.5V @ 250µA	18 nC @ 10 V	±20V	620 pF @ 40 V	-	3W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
ZXMP7A17GQTA MOSFET P-CH 70V 2.6A SOT223 Diodes Incorporated	1,989 In Stock	1 : ¥6.98000 Cut Tape (CT) 1,000 : ¥3.06234 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	70 V	2.6A (Ta)	4.5V, 10V	160mOhm @ 2.1A, 10V	1V @ 250µA	18 nC @ 10 V	±20V	635 pF @ 40 V	-	2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-3	TO-261-4, TO-261AA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.