Single FETs, MOSFETs

Results: 7
Manufacturer
EPCNexperia USA Inc.Rohm SemiconductorToshiba Semiconductor and StorageVishay Siliconix
Series
-eGaN®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V40 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
400mA (Ta)1.05A (Ta)13A (Ta)14A (Tc)30A (Tc)64A (Ta)90A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4V, 10V4.5V, 10V5V10V
Rds On (Max) @ Id, Vgs
1.1mOhm @ 50A, 5V2.2mOhm @ 30A, 5V23.5mOhm @ 10A, 10V160mOhm @ 8.4A, 10V200mOhm @ 6.5A, 10V200mOhm @ 600mA, 4.5V1.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
570mV @ 1mA (Typ)2.1V @ 250µA2.5V @ 13mA2.5V @ 1mA2.5V @ 28mA3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 4.5 V3.9 nC @ 4.5 V26 nC @ 5 V26 nC @ 10 V29 nC @ 10 V33 nC @ 5 V40 nC @ 10 V
Vgs (Max)
+6V, -4V±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V152 pF @ 16 V670 pF @ 25 V802 pF @ 50 V2400 pF @ 25 V3931 pF @ 50 V4523 pF @ 20 V
Power Dissipation (Max)
270mW (Ta)417mW (Ta)3.7W (Ta), 52W (Tc)3.7W (Ta), 88W (Tc)20W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)150°C150°C (TJ)
Supplier Device Package
DiePowerPAK® 1212-8S-MiniTO-236ABTO-252TO-263 (D2PAK)
Package / Case
DiePowerPAK® 1212-8TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
BSH105,215
MOSFET N-CH 20V 1.05A TO236AB
Nexperia USA Inc.
428,787
In Stock
1 : ¥2.05000
Cut Tape (CT)
3,000 : ¥0.61574
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
20 V
1.05A (Ta)
1.8V, 4.5V
200mOhm @ 600mA, 4.5V
570mV @ 1mA (Typ)
3.9 nC @ 4.5 V
±8V
152 pF @ 16 V
-
417mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
PowerPAK 1212-8
SIS890DN-T1-GE3
MOSFET N-CH 100V 30A PPAK1212-8
Vishay Siliconix
31,245
In Stock
1 : ¥11.08000
Cut Tape (CT)
3,000 : ¥4.58397
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
30A (Tc)
4.5V, 10V
23.5mOhm @ 10A, 10V
3V @ 250µA
29 nC @ 10 V
±20V
802 pF @ 50 V
-
3.7W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
EPC2066
EPC2066
TRANSISTOR GAN 40V .001OHM
EPC
7,005
In Stock
1 : ¥49.34000
Cut Tape (CT)
1,000 : ¥27.98517
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
40 V
90A (Ta)
5V
1.1mOhm @ 50A, 5V
2.5V @ 28mA
33 nC @ 5 V
+6V, -4V
4523 pF @ 20 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
EPC2071
EPC2071
TRANS GAN 100V .0022OHM 21BMPD
EPC
17,624
In Stock
1 : ¥54.51000
Cut Tape (CT)
1,000 : ¥28.17260
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
64A (Ta)
5V
2.2mOhm @ 30A, 5V
2.5V @ 13mA
26 nC @ 5 V
+6V, -4V
3931 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
RB098BM-40FNSTL
RD3P130SPFRATL
MOSFET P-CH 100V 13A TO252
Rohm Semiconductor
4,684
In Stock
1 : ¥14.94000
Cut Tape (CT)
2,500 : ¥6.72721
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
13A (Ta)
4V, 10V
200mOhm @ 6.5A, 10V
2.5V @ 1mA
40 nC @ 10 V
±20V
2400 pF @ 25 V
-
20W (Tc)
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
17,234
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.39475
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
400mA (Ta)
4.5V, 10V
1.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.6 nC @ 4.5 V
±20V
40 pF @ 10 V
-
270mW (Ta)
150°C
Automotive
AEC-Q101
Surface Mount
S-Mini
TO-236-3, SC-59, SOT-23-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIHF530STRL-GE3
MOSFET N-CH 100V 14A D2PAK
Vishay Siliconix
700
In Stock
1 : ¥8.46000
Cut Tape (CT)
800 : ¥3.21640
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
14A (Tc)
10V
160mOhm @ 8.4A, 10V
4V @ 250µA
26 nC @ 10 V
±20V
670 pF @ 25 V
-
3.7W (Ta), 88W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.