Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IMW65R027M1HXKSA1 MOSFET 650V NCH SIC TRENCH Infineon Technologies	240 In Stock	1 : ¥118.63000 Tube	CoolSIC™ M1	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	47A (Tc)	18V	34mOhm @ 38.3A, 18V	5.7V @ 11mA	62 nC @ 18 V	+23V, -5V	2131 pF @ 400 V	-	189W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3
IXFA72N30X3 MOSFET N-CH 300V 72A TO263AA Littelfuse Inc.	430 In Stock	1 : ¥80.78000 Tube	HiPerFET™, Ultra X3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	72A (Tc)	10V	19mOhm @ 36A, 10V	4.5V @ 1.5mA	82 nC @ 10 V	±20V	5400 pF @ 25 V	-	390W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA (IXFA)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IMBG65R048M1HXTMA1 SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies	889 In Stock	1 : ¥83.49000 Cut Tape (CT) 1,000 : ¥47.37106 Tape & Reel (TR)	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	45A (Tc)	18V	64mOhm @ 20.1A, 18V	5.7V @ 6mA	33 nC @ 18 V	+23V, -5V	1118 pF @ 400 V	-	183W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG65R107M1HXTMA1 SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies	810 In Stock	1 : ¥52.13000 Cut Tape (CT) 1,000 : ¥29.56802 Tape & Reel (TR)	CoolSIC™ M1	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	24A (Tc)	18V	141mOhm @ 8.9A, 18V	5.7V @ 2.6mA	15 nC @ 18 V	+23V, -5V	496 pF @ 400 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG65R030M1HXTMA1 SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies	925 In Stock	1 : ¥105.82000 Cut Tape (CT) 1,000 : ¥66.99980 Tape & Reel (TR)	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	63A (Tc)	18V	42mOhm @ 29.5A, 18V	5.7V @ 8.8mA	49 nC @ 18 V	+23V, -5V	1643 pF @ 400 V	-	234W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG65R083M1HXTMA1 SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies	0 In Stock Check Lead Time	1 : ¥58.21000 Cut Tape (CT) 1,000 : ¥32.99898 Tape & Reel (TR)	CoolSIC™ M1	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	28A (Tc)	18V	111mOhm @ 11.2A, 18V	5.7V @ 3.3mA	19 nC @ 18 V	+23V, -5V	624 pF @ 400 V	-	126W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.