Single FETs, MOSFETs

Results: 2
Manufacturer
Rohm SemiconductorToshiba Semiconductor and Storage
Series
-U-MOSIV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Ta)4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
48mOhm @ 4A, 4.5V107mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
1.5V @ 1mA2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
7 nC @ 10 V8.3 nC @ 4.5 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
235 pF @ 30 V475 pF @ 10 V
Power Dissipation (Max)
700mW (Ta)1W (Ta)
Supplier Device Package
SOT-23FTSMT3
Package / Case
SC-96SOT-23-3 Flat Leads
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
19,167
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.88140
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2.5A (Ta)
4.5V, 10V
107mOhm @ 2A, 10V
2.8V @ 1mA
7 nC @ 10 V
±20V
235 pF @ 30 V
-
1W (Ta)
150°C (TJ)
-
-
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
TSMT3
RTR040N03HZGTL
MOSFET N-CH 30V 4A TSMT3
Rohm Semiconductor
14,509
In Stock
1 : ¥5.34000
Cut Tape (CT)
3,000 : ¥1.52908
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
4A (Ta)
2.5V, 4.5V
48mOhm @ 4A, 4.5V
1.5V @ 1mA
8.3 nC @ 4.5 V
±12V
475 pF @ 10 V
-
700mW (Ta)
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TSMT3
SC-96
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.