Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiVishay Siliconix
Packaging
BulkTube
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
540mOhm @ 3.4A, 10V5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3V @ 1mA4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V180 pF @ 25 V
Power Dissipation (Max)
400mW (Ta)43W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
TO-220ABTO-92-3
Package / Case
TO-220-3TO-226-3, TO-92-3 (TO-226AA)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-92-3(StandardBody),TO-226_straightlead
2N7000
MOSFET TO92 N 60V 0.2A 5OHM 150C
onsemi
44,283
In Stock
40,000
Factory
1 : ¥4.02000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
60 V
200mA (Ta)
4.5V, 10V
5Ohm @ 500mA, 10V
3V @ 1mA
-
±20V
50 pF @ 25 V
-
400mW (Ta)
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-220AB
IRF510PBF
MOSFET N-CH 100V 5.6A TO220AB
Vishay Siliconix
46,112
In Stock
1 : ¥6.24000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
5.6A (Tc)
10V
540mOhm @ 3.4A, 10V
4V @ 250µA
8.3 nC @ 10 V
±20V
180 pF @ 25 V
-
43W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.