Single FETs, MOSFETs

Results: 2
Manufacturer
Texas InstrumentsVishay Siliconix
Series
NexFET™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
23.9mOhm @ 5A, 4.5V42mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
1.1V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.7 nC @ 4.5 V22 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
655 pF @ 10 V705 pF @ 15 V
Power Dissipation (Max)
1.7W (Tc)2.9W (Ta)
Supplier Device Package
6-WSON (2x2)SOT-23-3 (TO-236)
Package / Case
6-WDFN Exposed PadTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2347DS-T1-GE3
MOSFET P-CH 30V 5A SOT23-3
Vishay Siliconix
196,592
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.74211
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
5A (Tc)
4.5V, 10V
42mOhm @ 3.8A, 10V
2.5V @ 250µA
22 nC @ 10 V
±20V
705 pF @ 15 V
-
1.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
6-WSON
CSD25310Q2T
MOSFET P-CH 20V 20A 6WSON
Texas Instruments
18,935
In Stock
1 : ¥6.49000
Cut Tape (CT)
250 : ¥4.07372
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
20A (Ta)
1.8V, 4.5V
23.9mOhm @ 5A, 4.5V
1.1V @ 250µA
4.7 nC @ 4.5 V
±8V
655 pF @ 10 V
-
2.9W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-WSON (2x2)
6-WDFN Exposed Pad
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.