Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
230mA (Ta)260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V5V, 10V
Rds On (Max) @ Id, Vgs
3Ohm @ 100mA, 4.5V3Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA2V @ 250µA
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
14.1 pF @ 15 V25 pF @ 25 V
Power Dissipation (Max)
300mW (Ta)430mW (Ta)
Supplier Device Package
SOT-523X1-DFN1006-3
Package / Case
3-UFDFNSOT-523
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
X2-DFN1006-3
DMN65D8LFB-7B
MOSFET N-CH 60V 260MA 3DFN
Diodes Incorporated
451,228
In Stock
130,000
Factory
1 : ¥1.89000
Cut Tape (CT)
10,000 : ¥0.20525
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
260mA (Ta)
5V, 10V
3Ohm @ 115mA, 10V
2V @ 250µA
±20V
25 pF @ 25 V
-
430mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
X1-DFN1006-3
3-UFDFN
SOT-523
DMN26D0UT-7
MOSFET N-CH 20V 230MA SOT523
Diodes Incorporated
70,310
In Stock
2,253,000
Factory
1 : ¥2.63000
Cut Tape (CT)
3,000 : ¥0.44806
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
230mA (Ta)
1.2V, 4.5V
3Ohm @ 100mA, 4.5V
1V @ 250µA
±10V
14.1 pF @ 15 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.