Single FETs, MOSFETs

Results: 2
Series
TrenchTrenchT2™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
55 V100 V
Current - Continuous Drain (Id) @ 25°C
180A (Tc)200A (Tc)
Rds On (Max) @ Id, Vgs
4.2mOhm @ 50A, 10V6.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
109 nC @ 10 V151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
6900 pF @ 25 V6970 pF @ 25 V
Power Dissipation (Max)
360W (Tc)480W (Tc)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-263AB
IXTA180N10T-TRL
MOSFET N-CH 100V 180A TO263
Littelfuse Inc.
103
In Stock
1 : ¥48.44000
Cut Tape (CT)
800 : ¥29.23521
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
10V
6.4mOhm @ 25A, 10V
4.5V @ 250µA
151 nC @ 10 V
±20V
6900 pF @ 25 V
-
480W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
IXTA200N055T2-TRL
MOSFET N-CH 55V 200A TO263
Littelfuse Inc.
0
In Stock
Check Lead Time
800 : ¥20.14871
Tape & Reel (TR)
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
55 V
200A (Tc)
10V
4.2mOhm @ 50A, 10V
4V @ 250µA
109 nC @ 10 V
±20V
6970 pF @ 25 V
-
360W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.