Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedInfineon TechnologiesRohm Semiconductor
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
900mA (Ta)32A (Ta), 80A (Tc)80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
2.1mOhm @ 32A, 10V15mOhm @ 45A, 10V400mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.9 nC @ 10 V42.8 nC @ 10 V120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
219 pF @ 30 V2850 pF @ 15 V3830 pF @ 25 V
Power Dissipation (Max)
625mW (Ta)3W (Ta)260W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-HSOPSOT-23-3TO-220AB
Package / Case
8-PowerTDFNTO-220-3TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
ZXMP6A13FTA
MOSFET P-CH 60V 900MA SOT23-3
Diodes Incorporated
8,297
In Stock
1 : ¥4.43000
Cut Tape (CT)
3,000 : ¥1.49528
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
900mA (Ta)
4.5V, 10V
400mOhm @ 900mA, 10V
3V @ 250µA
5.9 nC @ 10 V
±20V
219 pF @ 30 V
-
625mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-220AB PKG
IRF8010PBF
MOSFET N-CH 100V 80A TO220AB
Infineon Technologies
992
In Stock
1 : ¥17.24000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
80A (Tc)
10V
15mOhm @ 45A, 10V
4V @ 250µA
120 nC @ 10 V
±20V
3830 pF @ 25 V
-
260W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
HSOP8
RS1E321GNTB1
MOSFET N-CH 30V 32A/80A 8HSOP
Rohm Semiconductor
4,800
In Stock
1 : ¥19.05000
Cut Tape (CT)
2,500 : ¥6.92704
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
32A (Ta), 80A (Tc)
4.5V, 10V
2.1mOhm @ 32A, 10V
2.5V @ 1mA
42.8 nC @ 10 V
±20V
2850 pF @ 15 V
-
3W (Ta)
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
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of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.