Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

CSD19537Q3 MOSFET N-CH 100V 9.7A/50A 8VSON Texas Instruments	4,288 In Stock	1 : ¥9.85000 Cut Tape (CT) 2,500 : ¥4.07443 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	50A (Ta)	6V, 10V	14.5mOhm @ 10A, 10V	3.6V @ 250µA	21 nC @ 10 V	±20V	1680 pF @ 50 V	-	2.8W (Ta), 83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-VSON-CLIP (3.3x3.3)	8-PowerTDFN
FDMC86160 MOSFET N CH 100V 9A POWER33 onsemi	3,428 In Stock	1 : ¥19.62000 Cut Tape (CT) 3,000 : ¥8.85789 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	9A (Ta), 43A (Tc)	6V, 10V	14mOhm @ 9A, 10V	4V @ 250µA	22 nC @ 10 V	±20V	1290 pF @ 50 V	-	2.3W (Ta), 54W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Power33	8-PowerWDFN
NVTFWS040N10MCLTAG PTNG 100V LL U8FL onsemi	1,269 In Stock	1 : ¥7.55000 Cut Tape (CT) 1,500 : ¥3.21195 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	6.1A (Ta), 21A (Tc)	4.5V, 10V	38mOhm @ 5A, 10V	3V @ 26µA	8.6 nC @ 10 V	±20V	520 pF @ 50 V	-	3.1W (Ta), 36W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.