Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IRF530NPBF MOSFET N-CH 100V 17A TO220AB Infineon Technologies	36,179 In Stock	1 : ¥7.47000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	17A (Tc)	10V	90mOhm @ 9A, 10V	4V @ 250µA	37 nC @ 10 V	±20V	920 pF @ 25 V	-	70W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF9530NPBF MOSFET P-CH 100V 14A TO220AB Infineon Technologies	31,523 In Stock	1 : ¥7.64000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	14A (Tc)	10V	200mOhm @ 8.4A, 10V	4V @ 250µA	58 nC @ 10 V	±20V	760 pF @ 25 V	-	79W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF530PBF MOSFET N-CH 100V 14A TO220AB Vishay Siliconix	8,542 In Stock	1 : ¥11.08000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	14A (Tc)	10V	160mOhm @ 8.4A, 10V	4V @ 250µA	26 nC @ 10 V	±20V	670 pF @ 25 V	-	88W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
RD3H160SPFRATL MOSFET P-CH 45V 16A TO252 Rohm Semiconductor	2,634 In Stock	1 : ¥13.30000 Cut Tape (CT) 2,500 : ¥5.50077 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	45 V	16A (Ta)	4V, 10V	50mOhm @ 16A, 10V	3V @ 1mA	16 nC @ 5 V	±20V	2000 pF @ 10 V	-	20W (Tc)	150°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.