Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiRohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
50 V60 V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta)200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V5V, 10V
Rds On (Max) @ Id, Vgs
2.2Ohm @ 200mA, 4.5V7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1V @ 1mA2.5V @ 250µA
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
25 pF @ 10 V50 pF @ 25 V
Power Dissipation (Max)
150mW (Ta)200mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23-3VMT3
Package / Case
SOT-723TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
VMT3 Pkg
RUM002N05T2L
MOSFET N-CH 50V 200MA VMT3
Rohm Semiconductor
749,840
In Stock
1 : ¥2.30000
Cut Tape (CT)
8,000 : ¥0.39900
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
1.2V, 4.5V
2.2Ohm @ 200mA, 4.5V
1V @ 1mA
±8V
25 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
VMT3
SOT-723
SOT-23-3
2N7002
MOSFET SOT23 N 60V 5OHM 150C
onsemi
80,140
In Stock
30,000
Factory
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥0.98624
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
±20V
50 pF @ 25 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.